| PART |
Description |
Maker |
| UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
| UPB100474EBH-3 UPB100474EDH-3 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 3 ns.
|
NEC
|
| AM100415-10DC |
1024 x 1 IMOX II ECL Bipolar RAM
|
Advanced Micro Devices
|
| PPECL2-1 PPECL2-1.25 PPECL2-1.5 PPECL2-2 PPECL2-2. |
100K ECL Logic 4-Bit Programmable Delay Modules
|
Rhombus Industries Inc.
|
| 0461-0080-01 0461-0016-01 0461-0020-01 0461-0024-0 |
ECL 100K 8 Tap Leading Edge Control |DELAY LINES
8 TAP LEADING EDGE CONTROL 100K ECL DELAY MODULES
|
BEL[Bel Fuse Inc.]
|
| LC3514A |
1024 x 4-Bit High Speed CMOS Static RAM
|
Sanyo
|
| UPD2101AL UPD2101AL-2 UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC
|
| HS-A82B-FREQ HS-820 HS-A82C-FREQ HS-A820-FREQ HS-A |
ECL-100K ECL Supplement
5 V, /-100 ppm, ECL crystal clock oscillator
5 V, /-50 ppm, ECL crystal clock oscillator
5 V, /-25 ppm, ECL crystal clock oscillator
5 V, customer specific, ECL crystal clock oscillator
|
NEL Frequency Controls
|
| MU9C1480A MU9C1480A-12DC MU9C1480A-12DI MU9C1480A- |
THE 1024 X 64-BIT LANCAM FACILITATES NUMEROUS 1024 X 64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (CAM)
|
ETC
|
| IDT100494BS7C IDT101494BS8C IDT101494BS8Y IDT10049 |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K (16K×4-BIT) SRAM
HIGH-SPEED BICMOS ECL STATIC RAM 64K (16K】4-BIT) SRAM
|
Integrated Device Technology
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
