| PART |
Description |
Maker |
| UPB100474ABH-6 UPB100474AD-5 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
|
NEC
|
| UPB100474EBH-3 UPB100474EDH-3 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 3 ns.
|
NEC
|
| SM-A82C-FREQ HS-820 HS830 HS-A820-FREQ HS-A821-FRE |
ECL-100K ECL Supplement
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MAC5114LE MAS5114LE MAL5114LE MAR5114LB |
Radiation hard 1024 x 4 bit static RAM
|
Dynex Semiconductor
|
| M2148H |
HIGH SPEED 1024 X BIT STATIC RAM
|
INTEL[Intel Corporation]
|
| N82S10 |
(N82S11x / N82S1x) 1024-Bit Bipolar RAM
|
Signetics
|
| LC875132A LC875148A LC875164A |
8-Bit Single Chip Microcontroller with 64/48/32K-Byte EPROM and 1024-Byte RAM On Chip
CMOS IC
8-BIT SINGLE CHIP MICROCONTROLLER WITH 64/48/32K-BYTE ROM AND 1024-BYTE RAM ON CHIP
|
SANYO[Sanyo Semicon Device]
|
| HS-A82B-FREQ HS-820 HS-A82C-FREQ HS-A820-FREQ HS-A |
ECL-100K ECL Supplement
5 V, /-100 ppm, ECL crystal clock oscillator
5 V, /-50 ppm, ECL crystal clock oscillator
5 V, /-25 ppm, ECL crystal clock oscillator
5 V, customer specific, ECL crystal clock oscillator
|
NEL Frequency Controls
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| EN29LV160AT-70BI EN29LV160AT-90BC EN29LV160AT-90BC |
Replaced by PTN78000W : 16兆位048K × 8 - 1024 kX6位）闪存
Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
