| PART |
Description |
Maker |
| STL11N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STD85N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STI360N4F6 STP360N4F6 |
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
High avalanche ruggedness
|
ST Microelectronics
STMicroelectronics
|
| STH140N8F7-2 |
High avalanche ruggedness
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| IRF252 IRF253 IRF250 IRF254 IRF251 IRFP251 IRFP253 |
HIGH VOLTAGE POWER MOSFET DIE N-CHANNEL ENHANCEMENT MODE HIGH RUGGEDNESS SERIES
|
IXYS[IXYS Corporation]
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPD60R460CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPL65R1K5C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPD60R800CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
