| PART |
Description |
Maker |
| EDI2CG27264V85D1 |
2x64Kx72, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,8.5ns,同同步突发静态存储器模块x64Kx72.3伏,8.5ns,同同步脉冲静态内存模块)
|
ZETTLER electronics GmbH
|
| GS818DV18D-250I GS818DV18D-300 GS818DV18D-300I GS8 |
250MHz 1M x 18 18MB sigmaQuad SRAM 300MHz 1M x 18 18MB sigmaQuad SRAM 333MHz 1M x 18 18MB sigmaQuad SRAM
|
GSI Technology
|
| PCK2010RA PCK2010RADL |
CK98R 100/133MHz RCC spread spectrum system clock generator CK98R (100/133MHz) RCC spread
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| 1278.101 1278.102 |
LIGHT PIPE 10 WAY 90 DEG 光管10未来0 LIGHT PIPE 20 WAY 90 DEG 光管2090
|
EPCOS AG
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology] http://
|
| GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构) SSRAM Modules 的SSRAM模块 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM 18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM 18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
| GS8180Q36D-167I GS8180Q36D-200 GS8180Q36D-200I |
167MHz 512K x 36 18MB sigmaQuad SRAM 200MHz 512K x 36 18MB sigmaQuad SRAM
|
GSI Technology
|
| CAT25C65SA-1.8TE13 CAT25C65SA-TE13 CAT25C65SE-1.8T |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS Light Pipe; Mounting Hole Dia:3.5mm; Material:Polycarbonate; Length:10.2mm; Color:Clear; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes LIGHT PIPE VERTICAL .350 ROUND Light Pipe; Mounting Hole Dia:3.5mm; Material:Polycarbonate; Length:7.6mm; Color:Clear; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
MITSUMI ELECTRIC CO., LTD. Panasonic Industrial Solutions CATALYST[Catalyst Semiconductor]
|