PART |
Description |
Maker |
DXTP19020DP5 DXTP19020DP5-13 DXTP19020DP5-15 |
20V PNP HIGH GAIN TRANSISTOR PowerDI?5 20V PNP HIGH GAIN TRANSISTOR PowerDI垄莽5 Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
EN3235A 2SC4482U-AN 2SC4482T-AN |
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single NMP
|
ON Semiconductor
|
ZXTN25020CFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 20V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
ZXTP26020DMFTA ZXTP26020DMF |
20V LOW VCE(SAT ) PNP SURFACE MOUNTED TRANSISTOR Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26 TRANS NPN BIPOLAR 300MW SOT26 TRANS PNP BIPOLAR 300MW SOT26 TRANSISTOR NPN 40V SOT363 High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Round Solutions
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
2SD2118Q 2SD2097 2SD2098 2SD2118 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-252VAR 晶体管|晶体管|叩| 20V的五(巴西)总裁| 10A条一(c)|52VAR
|
ROHM
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NSS20600CF8T1G NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™ 20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|