PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
2SA2092 |
-1A / -60V Bipolar transistor
|
ROHM[Rohm]
|
BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
2N3809DCSM |
Dual Bipolar PNP Devices in a hermetically sealed TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | LLCC
|
Seme LAB
|
EN3096A 2SC4489T-AN |
Bipolar Transistor Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE. TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
|
Continental Device India Limited
|
2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 1A条一c)|52AA TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 6.7AI(四)|63AB
|
Sumida, Corp.
|
2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有 POWER TRANSISTORS(3A/60V/30W) POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
|
2SB1184 2SB1185 2SB1243 A5800349 2SB1185F |
Power Transistor (-60V, -3A) From old datasheet system Power Transistor (-60V/ -3A)
|
Rohm
|
BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18 TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78 晶体管|晶体管|一对|互补| 60V的五(巴西)总裁| 600毫安一(c)|7 TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五(巴西)总裁| 200mA的一(c)|7
|
TT electronics Semelab, Ltd.
|