| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
| 5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| 5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped. 128K x 32 SRAM. 15ns access time. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish gold.
|
Aeroflex Circuit Technology
|
| M41T81M6 M41T81M6TR M41T81MX6 M41T81MX6T M41T81M6E |
SERIAL ACCESS RTC WITH ALARMS Serial Access Real-Time Clock with Alarms
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
| UT62L5128BS-70LI UT62L5128BS-55LLI UT62L5128BS-55L |
Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| M41T00SM6F M41T00S M41T00SM6E |
Serial Access Real-Time Clock
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
| M41T80M6E M41T80M6F M41T8006 M41T80 |
Serial access Real Time Clock with alarm
|
STMICROELECTRONICS[STMicroelectronics]
|
| M41T8011 |
Serial access real-time clock with alarm
|
STMicroelectronics
|