| PART |
Description |
Maker |
| TGS2306-EPU |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor,Inc.
|
| R411806121 R411803121 |
ATTENUATOR, SMA 2W 6DB 18GHZATTENUATOR, SMA 2W 6DB 18GHZ; Impedance:50R; Attenuation:6dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
ATTENUATOR, SMA 2W 3DB 18GHZATTENUATOR, SMA 2W 3DB 18GHZ; Impedance:50R; Attenuation:3dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W
|
Radiall S.A.
RADIALL S A
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| AWS5503 AWS5503S15 |
The AWS5503 is a Single Pole Double Throw (SPDT) GaAs MMIC assembled in a MSOP-8 plastic package.
GaAs IC High Power SPDT Reflective Switch Positive Control DC-3 GHz
|
Anadigics Inc
|
| CXG1189AXR |
High Power SPDT Switch
|
Sony Corporation
|
