| PART |
Description |
Maker |
| HN2E04F |
Multi-chip discrete device (PNP SW diode)
|
TOSHIBA
|
| AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30
64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22
256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22
1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22
128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66
512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components
Austin Semiconductor
|
| AS8S128K32PN-17/XT AS8S128K32PN-25/XT AS8S128K32PN |
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 CERAMIC, QFP-68
|
Micross Components
Austin Semiconductor, Inc
|
| MF3128-MLDAP01 MF3256-MLDAP01 MF3512-MLDAP01 |
128K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
256K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
512K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
|
|
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
| CYM1821PZ-12C CYM1821PM-12C |
16K X 32 MULTI DEVICE SRAM MODULE, 12 ns, ZMA64
16K X 32 MULTI DEVICE SRAM MODULE, 12 ns, SMA64
|
Cypress Semiconductor, Corp.
|
| EMS256K8BMO2-55M EMS256K8BMO2-55D EMS256K8BMO6-55I |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDMA32
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, PDMA32
|
OKI SEMICONDUCTOR CO., LTD.
|
| CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
|
