| PART |
Description |
Maker |
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| MTE8600N2 |
High Power Infrared Emitter
|
Marktech Corporate
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| SFH4209 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter
|
OSRAM GmbH
|
| SFH4258 |
(SFH4258 / SFH4259) High Power Infrared Emitter
|
OSRAM GmbH
|
| SEC7-975-01 |
8W/7W 9xxnm High Power Single Emitter Laser Diode
|
Bookham
|
| SEC9-940-01 |
9W 940nm High Power Single Emitter Laser Diode on C-mount
|
Bookham, Inc.
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
