| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| SSF8N60 |
Extremely high dv/dt capability
|
Silikron Semiconductor ...
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P40-G |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
