| PART |
Description |
Maker |
| VAM-6 |
Monolithic Amplifier DC-2 GHz
|
Mini-Circuits
|
| RAM-7 |
Monolithic Amplifier DC-2 GHz
|
Mini-Circuits
|
| GVA-84-15 |
Monolithic Amplifier DC-7 GHz
|
Mini-Circuits
|
| MRFIC2403 |
2.4 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| UPC2712T UPC2712T-E3 |
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
NEC[NEC]
|
| UPC2711T UPC2711T-E3 |
2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC[NEC]
|
| AD546 AD546K AD546KN AD546J |
1 pA Monolithic Electrometer Operational Amplifier OP-AMP, 1000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8
1 pA Monolithic Electrometer Operational Amplifier 静电功率放大器单片运算放大器
1 pA Monolithic Electrometer Operational Amplifier(单片静电计运算放大器) 静电功率放大器单片运算放大器（单片静电计运算放大器）
|
Analog Devices, Inc.
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| UPC2714T-E3 UPC2715T UPC2714T |
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.8 GHz的低功耗宽带放大器硅双极单片集成电
LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| VNA-22 |
.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| VNA-21 |
Temp.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
