| PART |
Description |
Maker |
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-554H4 554H4 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| HE8811 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
HITACHI[Hitachi Semiconductor]
|
| KLB-16AI-94 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢？3毫米（T.1）包
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| LEXLTN2S0001 LNA4905L08 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| LTE-4206 |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology
|
| MIE-334L3 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LN189S |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
