| PART |
Description |
Maker |
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
| TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
| FRS5XX |
850nm & 940nm Infrared LED Module Each LED watts: 0.06W
|
OptoSupply International
|
