| PART |
Description |
Maker |
| 2SC2230 2SC2230A 2SC2230AGR |
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 100MA I(C) | TO-92VAR
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS
|
TOSHIBA
|
| OP955 |
PIN Sili con Pho todiode
|
Optek Technology
ETC
OPTEK[OPTEK Technologies]
|
| OP905 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
|
| OP993 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
ETC
|
| AME8841REHA AME8841 AME8841AEHA AME8841BEHA AME884 |
Output voltage: 1.5V; 600mA CMOS LDO
Output voltage: 3.1V; 600mA CMOS LDO
Output voltage: 2.9V; 600mA CMOS LDO
Circular Connector; No. of Contacts:100; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 600毫安的CMOS LDO稳压
Output voltage: 2.85V; 600mA CMOS LDO
Output voltage: 3.7V; 600mA CMOS LDO
|
AME[Analog Microelectronics]
AME, Inc.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| UPA834TF UPA834TF-T1 PA834TF |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE NPN硅外延晶体管个不同的元素，采6引脚薄型模具迷你小包
NPN Silicon Epitaxial Transisitor(NPN外延晶体
|
NEC, Corp.
NEC Corp.
|
| BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
Comset Semiconductors
|
| BD165 |
(BD165 - BD169) SILIZIUM-NPN-EPITAXIAL-PLANAR-LEISTUNGSTRANSISTOREN SILICON NPN EPITAXIAL PLANAR POWRE TRANSISTORS
|
ETC
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| 2SC4401 |
NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SC3950 |
NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
