| PART |
Description |
Maker |
| BCX69 BCX69-25 BCX69-16 BCX69-10 |
PNP Silicon AF Transistors 自动对焦进步党硅晶体
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
General Purpose Transistors - SOT89; VCEO=20V; hFE=85..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250
|
INFINEON[Infineon Technologies AG]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| CDBF0320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
|
Comchip Technology
|
| EMH2604 |
Power MOSFET, 20V, 4A, 45mOhm, -20V, -3A, 85mOhm, Complementary Dual EMH8
|
ON Semiconductor
|
| PJP110ACZ |
20V; 10A; PNP epitaxial silicon darlington transistor
|
PROMAX-JOHNTON
|
| FMMTL718TA FMMTL71811 |
20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| 2SC4727 |
NPN Epitaxial Planar Silicon Transistor 20V/8A Switching Applications
|
SANYO
|
| 2SC4836 2SC4836F |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 5A条一（c）|园区
20V/5A Switch Applications
|
STMicroelectronics N.V.
SANYO[Sanyo Semicon Device]
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| CDSV3-204-G CDSV3-204-G12 |
Switching Diodes Array, V-RRM=20V, V-R=20V, P-D=200mW, I-F=100mA
Small Signal Switching Diodes
|
Comchip Technology
|
| IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
