| PART |
Description |
Maker |
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| AM27512-3DE AM27128A-15DI AM27128A-20/BXA AM27128A |
64K X 8 UVPROM, 300 ns, CDIP28
16K X 8 UVPROM, 150 ns, CDIP28
16K X 8 UVPROM, 200 ns, CDIP28
16K X 8 UVPROM, 200 ns, CQCC32
8K X 8 UVPROM, 150 ns, CDIP28
8K X 8 UVPROM, 250 ns, CQCC32
|
ADVANCED MICRO DEVICES INC
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| SPD4948SM SPD4942SM SPD4943SM SPD4944SM SPD4945SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD4947SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
Solid States Devices, I...
|
| AT28PC64E-25DM AT28PC64E-35DM/883 AT28PC64E-15DM A |
8K X 8 EEPROM 5V, 250 ns, CDIP28 0.600 INCH, CERDIP-28
8K X 8 EEPROM 5V, 350 ns, CDIP28 0.600 INCH, CERDIP-28
8K X 8 EEPROM 5V, 150 ns, CDIP28 0.600 INCH, CERDIP-28
8K X 8 EEPROM 5V, 200 ns, PQCC32 PLASTIC, LCC-32
8K X 8 EEPROM 5V, 250 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
8K X 8 EEPROM 5V, 150 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
|
Atmel, Corp.
|
| SHM80F SHM100F SHM20F SHM60F SHM140F SHM25F SHM40F |
FAST RECOVERY HIGH VOLTAGE RECTIFIER
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER 0.1 A, 6000 V, SILICON, SIGNAL DIODE
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.15 A, 4000 V, SILICON, SIGNAL DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER
RECTIFIER
|
Solid States Devices, Inc
Solid State Devices, Inc.
Solid States Devices, I...
|
| MJW2119310 MJW21194G |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247
|
ON Semiconductor
|
| GCS150PS12 GCS150PS48 GCS180PS28 GCS250PS56 GCS180 |
AC-DC Power Supplies 150/180/250/350 Watts
|
XP Power Limited
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
