| PART |
Description |
Maker |
| IRFB4115GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4321GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB3006PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4310ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7452QPBF10 |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF7855PBF |
HEXFETPower MOSFET
|
http://
IRF[International Rectifier]
|
| IR710PBF INTERNATIONALRECTIFIER-IR710PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
|
| IRLML2244TRPBF |
HEXFETpower MOSFET RoHS compliant containing no lead, no bromide and no halogen
|
TY Semiconductor Co., Ltd
|
| IRLML0030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| IRFZ44ZLPBF |
HEXFETPower MOSFET ( VDSS = 55V , RDS(on) = 13.9m, ID = 51A ) ㈢的HEXFET功率MOSFET（减振钢板基本\u003d 55V的，的RDS（on）\u003d十三点九米ヘ，身份证\u003d 51A条）
|
International Rectifier, Corp.
|
| 2N7002K |
N-Ch; 60V (DS) MOSFET; add ESD protect function N沟道0V(D-S) MOSFET;补充的ESD保护功能
N-Channel 60-V (D-S) MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
