| PART |
Description |
Maker |
| IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
SMPS MOSFET
Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SDP08S60 |
8A,600V Ultrafast Single Diode
|
WINSEMI SEMICONDUCTOR COMPANY LIMITED
|
| IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| IRFDC20 |
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier
|
| IRFBC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| IRFP22N60KPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier
|
| CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
