| PART |
Description |
Maker |
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| STGP10M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
|
STMicroelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGW40V60DLF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| STGP10H60DF |
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
|
ST Microelectronics
|
| STGD4M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
|
STMicroelectronics
|
| STGF15M65DF2 |
Trench gate field-stop IGBT M series, 650 V 15 A low loss
|
STMicroelectronics
|
| STGW20H60DF STGWT20H60DF |
Low thermal resistance
600 V, 20 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| APTGT150DH170G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 250 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
