| PART |
Description |
Maker |
| ESDA6V1 ESDA14V2 ESDAXX |
Dual transil arr ay for ESD protection
|
Weitron Technology
|
| AT1140DN-5.0TRG1 |
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
|
BCD Semiconductor Manufacturing Limited
|
| KS57C01502 KS57C01504 |
The KS57C01502/C01504 single-chip CMOS microcontroller has been designed for high-performance using Samsungs newest 4-bit CPU core, SAM47 (Samsung Arr
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT |
Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| 40N60SCD1 40N60SCD103 |
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM
|
IXYS Corporation
|
| HIF3BB-64D-2.54R-CL_21 HIF3BA-50D-2.54R-CL_21 HIF3 |
16 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, IDC, SOCKET
Cover (HIF3B Series) against EMI (Electromagnetic Interference)
DIODE ZENER SINGLE 1000mW 24Vz 25mA-Izt 0.05 0.5uA-Ir 18.2 SMA 5K/REEL
DIODE ZENER SINGLE 1000mW 16Vz 25mA-Izt 0.05 0.5uA-Ir 12.2 SMA 5K/REEL
DIODE SMA 400W/40A 100V TRANSIENT VOLTAGE SUPPRESSOT
DIODE ZENER SINGLE 1000mW 6.8Vz 100mA-Izt 0.05 5uA-Ir 4 SMA 5K/REEL
DIODE, ZENER, SMAZ9V1, 9.1V, DIOSMA
Cover (HIF3B Series) against EMI (Electromagnetic Interference) 封面（HIF3B系列）对EMI（电磁干扰）
|
http://
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
|
| RM100SZ-6S RM100SZ-6S/-6R RM100SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE
Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
| CDNBS08-T24C CDNBS08-T03 CDNBS08-T05 CDNBS08-T03C |
CDNBS08-T03~T36C - TVS Diode Array Series 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
|
Bourns Inc.
Bourns, Inc.
|
| RM60SZ-6S RM60SZ-6S/-6R RM60SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE
Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
