| PART |
Description |
Maker |
| LBT-121 |
Compact package based on the double-mold method.
|
ETC[ETC]
|
| 2P1M-YB 2P6M-YB 2P4M-YB 2P2MYC 2P2M-YB 2P2M-CY 2P0 |
4 A, 100 V, SCR PLASTIC PACKAGE-3
4 A, 600 V, SCR PLASTIC PACKAGE-3
4 A, 400 V, SCR PLASTIC PACKAGE-3
4 A, 200 V, SCR
4 A, 50 V, SCR
|
|
| 2SC5179-T1 2SC5179-T2 2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| 2SC5183 2SC5183-T1 2SC5183-T2 |
From old datasheet system
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| 2SC5186-T1 2SC5186 |
From old datasheet system
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC[NEC]
|
| PS21963-T09 PS21963-AT PS21963-CT |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21205 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| PS21964-T09 PS21964-CT PS21964-TW |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST09 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21964-ST09 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21961-AT PS21961-CT PS21961-T PS21961-TW |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| BGA-320P-M06 |
PLASTIC BALL GRID ARRAY PACKAGE 320 PIN PLASTIC
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
|
