| PART |
Description |
Maker |
| KM432S2030CT-G7 KM432S2030CT-F10 KM432S2030CT-G6 K |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 |
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G |
1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
512K x 16bit x 2 Banks Synchronous DRAM LVTTL 12k × 16位2银行同步DRAM LVTTL
|
Samsung semiconductor
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| CY7C1383F-133BGC CY7C1383F-133BGI CY7C1383F-133BGX |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 512K X 36 CACHE SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 512K X 36 CACHE SRAM, 8.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM
From old datasheet system
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
|
IDT
|
| CY7C1383DV25-133AXC CY7C1381DV25-133AXC CY7C1381DV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1447AV25-133BGXI CY7C1447AV25-133BGI CY7C1447A |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM
|
Cypress Semiconductor
|
