| PART |
Description |
Maker |
| PHB50N03T PHB50N03 |
N-channel TrenchMOS transistor Logic level FET
TrenchMOS transistor Standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK9618-55 BUK9618-56 BUK9618-55118 |
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP SEMICONDUCTORS
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BUK7615-100A BUK7615-100A_1 |
TrenchMOS transistor Standard level FET
TrenchMOS TM transistor Standard level FET
From old datasheet system
TrenchMOS(tm) transistor Standard level FET
|
NXP Semiconductors
Philips
|
| PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118 |
10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3
N-channel TrenchMOS TM transistor Logic level FET
N-channel TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| K3296 2SK3296 2SK3296-ZK 2SK3296-ZJ 2SK3296-S |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,35A I(D),TO-220AB
MOS FIELD EFFECT TRANSISTOR
Power MOS FET
|
NEC Corp.
NEC[NEC]
|
| BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT
PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
