| PART |
Description |
Maker |
| T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2214 TGA2214-15 |
2 to 18 GHz 5W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CMPA801B025D |
25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA601C025D |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA5585025F CMPA5585025F-AMP CMPA5585025F-TB |
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
|
