| PART |
Description |
Maker |
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| AP2122 AP2122AK-3.3TRE1 AP2122AK-1.5TRE1 AP2122AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| CZT2000 |
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
