| PART |
Description |
Maker |
| AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system
EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC
4 Mbit (512 K x 8-Bit)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| IDT72V70200 72V70200_DS_72847 IDT72V70200PQF IDT72 |
512 x 512 TSI, 16 I/O at 2Mbps, 3.3V
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| HM658512AI |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
4 M PSRAM (512-kword ?8-bit)(4 M PSRAM (512k瀛??8浣?)
|
Hitachi,Ltd.
|
| AM29F400BB-55FEB AM29F400BB-55FIB AM29F400BT-55FCB |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
http://
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| M41T56C64MY6E |
512 bit (64 bit x8) Serial Access TIMEKEEPER SRAM 64 Kbit (8192 bit x8) EEPROM
|
ST Microelectronics
|
| LPC2387FBD100 LPC2387 |
Single-chip 16-bit/32-bit microcontrollers; 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
