| PART |
Description |
Maker |
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| FDD6N20TM |
N-Channel UniFETTM MOSFET 200V, 4.55A, 800m
|
Fairchild Semiconductor
|
| FDPF20N50 FDP20N50 |
N-Channel UniFETTM MOSFET 500V, 20A, 230m
N-Channel UniFETTM MOSFET 500V, 20A, 230 m
|
Fairchild Semiconductor
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTM |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STY100NS20FD 7739 |
N-CHANNEL Power MOSFET
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET
From old datasheet system
N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| FDT3N40 |
N-Channel UniFETTM MOSFET 400V, 2A, 3.4
|
Fairchild Semiconductor
|
| FDD3N40 FDU3N40 |
N-Channel UniFETTM MOSFET 400V, 2A, 3.4
|
Fairchild Semiconductor
|
|
