PART |
Description |
Maker |
A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
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AMIC Technology
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AS7C1026A-10JC AS7C1026A-15JI AS7C31026A-10TI AS7C |
5V 64K x 16 CM0S SRAM , 12ns access time 5V/3.3V 64K X 16 CMOS SRAM 5V 64K x 16 CM0S SRAM , 10ns access time 3.3V 64K x 16 CM0S SRAM , 12ns access time
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation]
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HM-6514/883 HM-6514B/883 |
RAM, 1024x4 CMOS, Access Time 300ns, Mil Std. RAM, 1024x4 CMOS, Access Time 200ns, Mil Std.
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Intersil
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K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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AM29F002BT-90ED AM29F002BB-70ED AM29F002NBB-70PD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 Flash Memory IC; Package/Case:32-DIP; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
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SPANSION LLC
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5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). UT9Q512K32 16Megabit SRAM MCM UT9Q512K32 16Megabit SRAM MCM 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
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AEROFLEX[Aeroflex Circuit Technology]
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M41T80M6E M41T80M6F M41T8006 M41T80 |
Serial access Real Time Clock with alarm
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STMICROELECTRONICS[STMicroelectronics]
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HM-6551/883 |
RAM, 256x4, CMOS, Access Time 220ns Max
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Intersil
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AS7C3256-12TC AS7C256-12TI AS7C3256-12TI |
3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time 5V 32K x 8 CM0S SRAM (common I/O), 12ns access time
|
Alliance Semiconductor
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5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 16Megabit SRAM MCM 16Megabit的SRAM亿立方米 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Techno... http:// AEROFLEX[Aeroflex Circuit Technology] Aeroflex Inc. Aeroflex, Inc.
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