| PART |
Description |
Maker |
| TGA2214 TGA2214-15 |
2 to 18 GHz 5W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGA2578-CP TGA2578-CP-15 |
2 to 6 GHz, 30W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G2028536-FLEVB1 T1G2028536-FL-15 |
285W, 36V DC ?2 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G4003532-FL-15 T2G4003532-FL-EVB1 T2G4003532-FS |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CMPA0060025D |
25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA1D1E025F CMPA1D1E025F-AMP |
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
|
Cree, Inc
|
| MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
|