| PART |
Description |
Maker |
| SSF53A0E |
High Power and current handing capability
|
Silikron Semiconductor Co.,...
|
| SSF4606 |
High Power and current handing capability
|
Silikron Semiconductor Co.,LTD.
|
| GDSSF2301A-15 |
GENERAL FEATURES
High Power and current handing capability
|
GOOD-ARK Electronics
|
| GDSSF2300A-15 |
GENERAL FEATURES
High Power and current handing capability
|
GOOD-ARK Electronics
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SD1411A EE08318 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)
From old datasheet system
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
