| PART |
Description |
Maker |
| STK16C88-S35 STK16C88-S45I STK16C88-S35I STK16C88- |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA
NVRAM (EEPROM Based)
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):35A; Peak Non Repetitive Surge Current, Itsm:500A; Gate Trigger Current Max, Igt:40uA
DIODE TVS 13V 500W AXL UNI 5% NVRAM中（EEPROM的基础
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
|
Electronic Theatre Controls, Inc.
|
| CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BDY25 180T2 181T2 182T2 BDY23 BDY24 BDY182 BDY181 |
8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF
NPN SILICON TRANSISTORS/ DIFFUSED MESA
8/20us Max :65V; Peak Energy (10/1000uS):3J; Capacitance, Cd:2700pF
NPN SILICON TRANSISTORS, DIFFUSED MESA
|
Comset Semiconductors
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BDX91 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:300Vrms; Voltage Rating DC, Vdc:405VDC; Peak Surge Current (8/20uS), Itm:1200A; Clamping Voltage 8/20us Max :775V; Peak Energy (10/1000uS):25J; Capacitance, Cd:70pF
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
Seme LAB
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
|
Teridian Semiconductor, Corp.
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| IDT70V5378S166BCI IDT70V5378S166BGI IDT70V5388S166 |
Ultrasonic Sensor; Sensing Range Max:500mm; Sensor Terminals:Quick Disconnect; Sensor Output Type:PNP; Frequency:300kHz; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Range Min:50mm; Supply Voltage:30VDC
Ultrasonic Sensor; Sensing Range Max:500mm; Sensor Terminals:Cable; Sensor Output Type:PNP; Frequency:300kHz; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Range Min:50mm; Supply Voltage:30VDC
Proximity Sensor; Sensor Input Type:Optical; Sensing Range Max:150mm; Leaded Process Compatible:No; Output Type:PNP; Peak Reflow Compatible (260 C):No
3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM 32K X 18 FOUR-PORT SRAM, 3 ns, PBGA256
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| MDE-53D951K |
950V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc
|
MDE Semiconductor
|
| HD-02103AST |
Stick Coupler
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:60V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A)
Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲）
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲）
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
TE Connectivity, Ltd.
|
