| PART |
Description |
Maker |
| BB731 |
Silicon epitaxial planar capacitance diodes with very wide effective capacitance
|
TY Semiconductor Co., Ltd
|
| G7881-21 G7881-22 G7881-23 G7881-32 G7881-44 G8339 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 20x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 25V; Case Size: 25x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 400V; Case Size: 20x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 400V; Case Size: 35x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 22x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 25x50 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 30x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
FIBER OPTIC RECEIVER, 1250Mbps, PANEL MOUNT, LC CONNECTOR
Aluminum Snap-In Capacitor; Capacitance: 68uF; Voltage: 400V; Case Size: 20x25 mm; Packaging: Bulk
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| BB814 BB814-1 BB814-2 |
Small signal capacitance diode for frequency tuning in FM radio tuners
Silicon Epitaxial Planar Dual Capacitance Diode
From old datasheet system
|
Vishay Telefunken
Vishay Siliconix
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| RKV5000DKK |
Diodes>Variable Capacitance
Variable Capacitance Diode for UHF/VHF tuner
Vari-Cap Diodes for Electric Tuning
|
RENESAS[Renesas Electronics Corporation]
http://
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| PT2124 PT2124-C4 PT2124-C4-NNXI-C PT2124-C4-NNXI-F |
FAN CONTROLLER 风扇控制
Film Capacitor; Voltage Rating:1000VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.056uF; Capacitance Tolerance: /- 10%; Lead Pitch:22.5mm; Leaded Process Compatible:Yes; Package/Case:M RoHS Compliant: Yes
|
Princeton Technology, Corp.
Princeton Technology Corporation
PTC[Princeton Technology Corp]
|
| HVU355B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVU316 |
Diodes>Variable Capacitance
Variable Capacitance Diode for BS/CS tuner
|
Renesas Electronics Corporation
|
| SCP-5759 |
LOW CAPACITANCE HYPERABRUPT VARACTOR DIODE 1.5 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Sensitron Semiconductor
|
