| PART |
Description |
Maker |
| IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IKW75N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
|
Infineon
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| GT50N322A |
IGBT for soft switching applications
|
TOSHIBA
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| IKQ50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKQ75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| FD1600R17KF6CB2 |
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
|
Infineon Technologies AG
|
| MT6L53S MT3S05T MT3S06T |
VHF-UHF Band Low Noise Amplifier Application (Oscillator Applic)
|
TOSHIBA[Toshiba Semiconductor]
|
