| PART |
Description |
Maker |
| HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
| GM20022005D |
GaN MMIC
|
RFHIC
|
| HMC512LP5 HMC512LP5E |
MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz
|
Hittite Microwave Corporation
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
| CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
| TGA2958 |
13 to 18 GHz 2W GaN Driver Amplifier
|
TriQuint Semiconductor
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| HMMC-3004 |
DC-16 GHz GaAs HBT MMIC Divide-by-4 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路定标
DC-16 GHz GaAs HBT MMIC Divide-by-4 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路4定标
|
Agilent(Hewlett-Packard)
|
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
