| PART |
Description |
Maker |
| MGA-22103 MGA-22103-TR1G |
2.5-2.7 GHz WiMAX Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
| MGA-22003-TR1 MGA-22003-BLK MGA-22003-TR2 |
2.3-2.7 GHz 3x3mm WiMAX and WiFi Power Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| MGA-43528-BLKG |
High Linearity 1.93 ?1.995 GHz Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
| PTMA180402M11 |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz
|
Infineon Technologies AG
|
| MGA-43328-BLKG |
2.5?.7 GHz 29dBm High Linearity Wireless Data Power Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| HMC592 |
high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| HMC591LP5 |
high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
40A 100V 0.040 Ohm N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| HUF75639S3R4851 HUF75639S3NL |
Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC 2NO DPDT Snap Action, 20 mm
56A 115V 0.025 Ohm N-Channel UltraFET Power MOSFET
56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
56A/ 115V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
|
