| PART |
Description |
Maker |
| STL50NH3LL07 STL50NH3LL |
N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.011 ヘ - 13 A - PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STP30NM30N |
N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET
N-channel 300V - 0.078ヘ - 30A - TO-220 Ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| STW23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| STF8N90K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| STD5N95K5 STF5N95K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| STF10LN80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
| SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPI08N50C3 SPP08N50C3 SPA08N50C3 SPP08N50C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPP12N50C3 SPP12N50C307 SPA12N50C3 SPI12N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
