| PART |
Description |
Maker |
| BFS17W |
NPN 1GHz wideband transistor(NPN 1G赫兹 宽带晶体
NPN 1 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFG198 |
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
NPN 8 GHz wideband transistor
|
NXP
Philips Semiconductors
|
| BFS520 |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| BFU590Q |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU520W BFU520W-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU520A BFU520A-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU710F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU725F-N1 BFU725F11 BFU725F-N1-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU910F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| 2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE
|
NEC Corp.
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管（npn型第六代赫兹宽带晶体管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
