| PART |
Description |
Maker |
| 2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| BFG541 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
| BFS540 BFS54000 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
| BFU530A |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU550 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU530XR |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU630F |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU520XR BFU520XR-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU768F-15 BFU768F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU790F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
