| PART |
Description |
Maker |
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
| 1GB-DDR3L-AS4C128M8D3L |
internal banks for concurrent operation
|
Alliance Semiconductor ...
|
| KBP306 KBP310 |
VOLTAGE RANGE 50 TO 1000 VOL TS
|
Gaomi Xinghe Electronic...
|
| 2CL73T |
High Voltage Fast Recovery Rectifier 12 kV Vol ts
|
Micro Commercial Compon...
|
| A623308AV-70SF A623308AV-70SIF A7623L-S08-T A62330 |
2×75?/a> DRIVER IC WITH 3 INTERNAL CIRCUITS
2×75 DRIVER IC WITH 3 INTERNAL CIRCUITS
2】75з DRIVER IC WITH 3 INTERNAL CIRCUITS
25з DRIVER IC WITH 3 INTERNAL CIRCUITS
8K X 8 BIT CMOS SRAM 8K的8位CMOS的SRAM
|
UTC[Unisonic Technologies]
AMICC[AMIC Technology]
友顺科技股份有限公司
AMIC Technology Corporation
AMIC Technology, Corp.
|
| AVR32919 |
512KBytes internal flash, 256KBytes internal RAM
|
ATMEL Corporation
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC10H130FN MC10H130L MC10H130P ON0752 |
Dual In/Single Out Autoswitching Power MUX, Manual/Auto Sw, Adj. Cur Limit, Adj. Vol Threshold 8-TSSOP -40 to 85 10H SERIES, DUAL LOW LEVEL TRIGGERED D LATCH, COMPLEMENTARY OUTPUT, PDIP16
From old datasheet system
Dual Latch
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
