| PART |
Description |
Maker |
| AS4C32M16MD1 AS4C32M16MD1-5BCN |
Four internal banks for concurrent operation
|
Alliance Semiconductor ...
|
| IS46LR32400G |
Four internal banks for concurrent operation
|
Integrated Silicon Solu...
|
| KBP306 KBP310 |
VOLTAGE RANGE 50 TO 1000 VOL TS
|
Gaomi Xinghe Electronic...
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W83L784R |
Notebook H/W Monitor: 3 Temp.(Thermal Diode), 4 Vol., 2 Smart Fan, PWR OK, PWR Down Mode
|
Winbond Electronics
|
| MSM66P56-XX MSM66P54-XX MSM6650 MSM6656A MSM6656-X |
Internal Mask ROM Voice Synthesis IC, Internal One-Time-Programmable (OTP) ROM
|
OKI
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| BA000LBSG BA032LBSG BA028LBSG1 BA029LBSG BA000LBSG |
Super-mini package regulator IC
Internal output transistor (IO=150mA), Internal temperature protection circuit
|
ROHM[Rohm]
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
