| PART |
Description |
Maker |
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| ZXTN04120HFF ZXTN04120HFFTA |
120V, SOT23F, NPN medium power Darlington transistor
|
Diodes Incorporated
|
| FMMT494QTA FMMT494QTC FMMT494TA FMMT494TC FMMT494- |
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| ZXTN04120HK ZXTN04120HKTC ZXTN04120HK-15 |
Discrete - Bipolar Transistors - Darlington Transistors
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252
|
Diodes Incorporated
|
| ZDT619 |
DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
|
ZETEX[Zetex Semiconductors]
|
| 2SB688 2SB688O 2SB688R |
POWER TRANSISTORS(8A/120V/80W)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR
POWER TRANSISTORS(8A,120V,80W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SC4102E 2SC4102R 2SC4102S 2SC3906KR 2SC3906KE 2SC |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-70 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|的SC - 70
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|律师- 59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-59
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SC-70
|
NEC, Corp.
Rohm Co., Ltd.
Infineon Technologies AG
|
| FZT689 FZT689B |
SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
