| PART |
Description |
Maker |
| P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
|
MDE Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 3.0SMCJ |
3000W peak pulse power capability with 10/1000μs waveform
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| AD8305 |
100 dB-range (10nA-1mA) Logarithmic Converter
|
Analog Devices
|
| P4KA6.8 P4KA7.5 P4KA7.5A P4KA6.8A P4KA9.1 P4KA10 P |
Automotive Transient Voltage Suppressors Peak Pulse Power 400W
|
VISAY[Vishay Siliconix]
|
| STA3KB86JE STA3KA102JE STA3KA124JE STA3KA13.6JE ST |
3,000 WATTS PEAK PULSE POWER 13.6 - 800 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
3,000 WATTS PEAK PULSE POWER 13.6 - 800 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
http://
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| SMDJ5.0A SMDJ6.0 SMDJ6.0A SMDJ7.0 SMDJ7.0A SMDJ7.5 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power 表面贴装瞬态电压抑制电.070伏特000瓦峰值脉冲功
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power 表面贴装瞬态电压抑制电5.070伏特000瓦峰值脉冲功
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power 表面贴装瞬态电压抑制电.0170伏特000瓦峰值脉冲功
|
Electronic Theatre Controls, Inc.
|
| MRF1004MB |
Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz
|
M/A-COM Technology Solutions, Inc.
|
| 15KE6V8A 1.5KE170CA |
1500W Peak Pulse Power Dissipation Constructed with Glass Passivated Die
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| MRF1150MB |
Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz
|
M/A-COM Technology Solutions, Inc.
|
