| PART |
Description |
Maker |
| S8865-128G S8865-64G S8866-128G-02 S8865-256G S886 |
Photodiode array combined with signal processing IC for X-ray detection
|
Hamamatsu Corporation
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| AA16-9DIL18 |
Avalanche Photodiode Array
|
HY ELECTRONIC CORP.
|
| G7150-16 G67150 G7151 |
InGaAs PIN photodiode array
|
Hamamatsu Corporation
|
| RA0256BAQ011 |
AREA SELF-SCANNED PHOTODIODE ARRAY 区自扫描光电二极管阵
|
Panasonic, Corp.
|
| RA0128NAF011 |
AREA SELF-SCANNED PHOTODIODE ARRAY 区自扫描光电二极管阵
|
Air Cost Control
|
| RL0256SCQ111 RL0512SCQ011 |
LINEAR SELF-SCANNED PHOTODIODE ARRAY 线性自扫描光电二极管阵
|
Fairchild Semiconductor, Corp.
|
| PDB-C216 |
Blue Enhanced Linear Array Silicon Photodiode
|
Advanced Photonix, Inc.
|
| PDB-C232 |
Blue Enhanced Linear Array Silicon Photodiode
|
Advanced Photonix, Inc.
|
| SD219-51-03-301 |
Blue Enhanced Linear Array Silicon Photodiode
|
Advanced Photonix, Inc.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
