| PART |
Description |
Maker |
| FGA272-638G FGA303-638G FGAX600-638G FGA304-638G F |
272 POS 1.27MM BGA ADAPTER BGA272, IC SOCKET
303 POS 1.27MM BGA ADAPTER BGA303, IC SOCKET
600 POS 1.27MM BGA EXTRACTION ADAPTER BGA600, IC SOCKET
304 POS 1.27MM BGA ADAPTER BGA304, IC SOCKET
168 POS 1.27MM BGA EXTRACTION ADAPTER BGA168, IC SOCKET
304 POS 1.27MM BGA EXTRACTION ADAPTER
255 POS 1.27MM BGA EXTRACTION ADAPTER
357 POS 1.27MM BGA ADAPTER
560 POS 1.27MM BGA ADAPTER
|
Advanced Interconnections, Corp.
ADVANCED INTERCONNECTIONS CORP
|
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS71V08F64GS08-7085AI IS71V08F64GS08-7085BI |
SPECIALTY MEMORY CIRCUIT, PBGA101 11 X 12 MM, BGA-101
SPECIALTY MEMORY CIRCUIT, PBGA73 8 X 11.60 MM, BGA-73
|
Integrated Silicon Solution, Inc.
|
| 2FGA320-638G 2FGAX241-720G |
320 POS 1.27MM BGA ADAPTER
241 POS 1.27MM BGA SMT ADAPTER
|
Advanced Interconnections
|
| FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET
From old datasheet system
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
| IBM25PPC740L-GB375A2T IBM25PPC740L-GB375A2R IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|360PIN|CERAMIC
MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC 微处理器| 32位|的CMOS | BGA封装| 255PIN |陶瓷
|
Glenair, Inc.
Vishay Semiconductors
|
| IS61NVP51272-250B1 IS61NVP51272-250B1I IS61NVP1024 |
512K X 72 ZBT SRAM, 2.6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
1M X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
1M X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
512K X 72 ZBT SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
|
Integrated Silicon Solution, Inc.
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
|
