| PART |
Description |
Maker |
| G2-DB02-SR G2-DB02-TT G2-DB01-ST G2-DB02-ST |
RELAY SSR DPST-NC 200MA 8PIN SMD TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX
RELAY SSR DPST-NC 200MA 8 DIP TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX
|
Crydom, Inc.
|
| SC1531ACSTR SC1531CSTR SC1531 SC1531A SC1531ACS.TR |
200 mA & 250 mA smart LDOs
200mA & 500mA SmartLDOs
200mA & 250mA SmartLDOs
250mA SmartLDOs(250mA SmartLDOs线性稳压器)
200mA SmartLDOs(200mA SmartLDOs线性稳压器)
|
SEMTECH[Semtech Corporation]
|
| MP3394S MP3394SGY MP3394SGS MP3394SGF |
Step-Up, 4-String Max 200mA/String White LED Driver
|
Monolithic Power Systems
|
| HM28-20002 HM28-25032 HM28-24016 HM28-35041 HM28-2 |
DATA LINE FILTER
FERRITE BEAD SMD805 600R /-25% DCR=0.30 200MA M/L
Buckle Style Core Common-Mode Chokes 扣风格核心共模扼流圈
0-SPEED DIFF 2-WIRE GTS W/TIN PLATE 扣风格核心共模扼流圈
130 AMP BI-DIRECTIONAL CURRENT SENSOR 扣风格核心共模扼流圈
2-WIRE DIFF SPEED AND DIRECTION GTS
SEE ATS642LSHTN-I2-T
100A CURRENT SENSOR, CB-PFF-5, 754; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:5; Case style:CB-PFF; Base number:754; Temperature, operating range:-40(degree C) to (degree C) RoHS Compliant: Yes
SEE ATS643LSHTN-I2-T
Multilayer Ferrite Beads; Series:ILBB; Inductance:600uH; Inductance Tolerance: /- 25 %; Package/Case:0805; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:200mA; Impedance:600ohm; Leaded Process Compatible:Yes
100 AMP BI-DIRECTIONAL CURRENT SENSOR
|
BI TECHNOLOGIES CORP
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UPD30101GM-33-8ED |
Linear Voltage Regulators for Automotive Applications; Package: PG-TO263-5; Regulator Type: tracker; Output Voltage: adj.; Accuracy: 0.5 %; Max. Output Current: 200mA; Dropout Voltage: 280mV 64位微处理
|
Intersil, Corp.
|
| SB02-15 |
150V, 200mA Rectifier(用于高频整流应用的重复反向电50V，平均整流电00mA 整流
Small signal(single type)
Schottky Barrier Diode
150V/ 200mA Rectifier
|
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| TC1266VUA TC1266VOA TC1266 TC1266VUATR TC1266VOATR |
The TC1266 is an application-specific, low dropout regulator (LDO) specifically intended for use in PCI peripheral card applications ...
200mA PCI LDO
The TC1266 is an application-specific, low dropout regulator (LDO) specifically intended for use in PCI peripheral card applications complying with PCI Power Management (PCI 2.0). It provides an uninterrupted, 3.3V, 200mA (max) output volt
|
MICROCHIP[Microchip Technology]
|
| SB02-09CP |
90V, 200mA Rectifier Shottky Barrier Diode
Small signal(single type)
90V/ 200mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MPAT-584643-10151MS MPAT-584643-10153FS MPAT-58464 |
5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
950 MHz - 1450 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
14000 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
10.95 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
3800 MHz - 4100 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.3 dB INSERTION LOSS-MAX
17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
4000 MHz - 8000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2 dB INSERTION LOSS-MAX
3100 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
8000 MHz - 12000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
18800 MHz - 19600 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
10700 MHz - 11700 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
|
| K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
