| PART |
Description |
Maker |
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| MPS6651 MPS6601 MPS6602 MPS6652 ON2329 |
Amplifier Transistors 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
(MPS6602) Amplifier Transistors
Voltage and current are negative for PNP transistors
From old datasheet system
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| BC212 BC214 BC213 BC212B ON0141 BC214RL1 |
Amplifier Transistor PNP
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Amlifier Transistors (PNP) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Amplifier Transistors(PNP Silicon) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
ON Semiconductor
|
| DSS60600MZ4 DSS60600MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
6 A, 60 V, PNP, Si, POWER TRANSISTOR GREEN, PLASTIC PACKAGE-4
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| PDTA143TEF PDTA143TE PDTA143T PDTA143TK PDTA143TM |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = open
|
NXP Semiconductors
|
| 2N4402 2N4403 ON0046 2N4403RLRE |
General Purpose Transistors PNP
General Purpose Transistors(PNP Silicon)
Motorola Preferred Device
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| BF493 BF491 BF492 |
PNP SILICON PLANAR TRANSISTORS
PNP SILICON HIGH VOLTAGE TRANSISTORS
|
MICRO-ELECTRONICS[Micro Electronics]
|
| PDTA144E PDTA144EE PDTA144EU PDTA144EU115 PDTA144E |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟
|
NXP Semiconductors N.V.
|
| PDTA114YEF PDTA114YT PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=10千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| UMT3906 SST3906 MMST3906 2N3906 A5800337 MMST3906T |
晶体管|晶体管|进步党| 40V的五（巴西）总裁| 200mA的一c）|的SOT - 346
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | SOT-346
From old datasheet system
PNP General Purpose Transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM[Rohm]
|
