| PART |
Description |
Maker |
| TST30U60C |
30A, 60V Trench Schottky Rectifier
|
Taiwan Semiconductor Co...
|
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 30SLJQ060SCS |
30A 60V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
|
International Rectifier
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| FGPF30N45T FGFP30N45TTU |
450V, 30A PDP Trench IGBT
|
Fairchild Semiconductor
|
| 2SJ280L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262AA
|
|
| RGCL60TK60 |
650V 30A Field Stop Trench IGBT
|
Rohm
|
| RGCL60TK60D |
600V 30A Field Stop Trench IGBT
|
ROHM
|
| STB30NE06L |
N-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET POWER MOSFET
|
ST Microelectronics
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）| TO - 220AB现有
|
Powerex, Inc.
|
| RFP30N06LE RF1S30N06LESM FN3629 |
From old datasheet system
30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
