| PART |
Description |
Maker |
| 30SCLJQ060 |
30A 60V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package
SCHOTTKY RECTIFIER
|
International Rectifier
|
| SF30SC6 |
Schottky Rectifiers (SBD) (60V 30A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 30SLJQ060SCS |
30A 60V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
|
International Rectifier
|
| RFP30P06 RF1S30P06SM RFG30P06 RF1S30P06 FN2437 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
From old datasheet system
30A 60V 0.065 Ohm P-Channel Power MOSFETs
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FMB-2306 |
30A Schottky barrier diode in TO220F package
Schottky Barrier Diode - 60V
|
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| FGA30N120FTD FGA30N120FTDTU |
1200V, 30A Trench IGBT
|
Fairchild Semiconductor
|
| RGTH60TK65D |
650V 30A Field Stop Trench IGBT
|
ROHM
|
| SB300-09 |
90V/ 30A Rectifier
90V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SB300-05R |
50V/ 30A Rectifier
50V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| STB30NE06L 6525 |
From old datasheet system
N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| FME-230A |
Schottky Barrier Diode - 90V/100V
100V, 30A Schottky barrier diode in TO220F package
100V/ 30A Schottky barrier diode in TO220F package
CRYSTAL 20.000000 MHZ SMD 8PF
|
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
