| PART |
Description |
Maker |
| IRF8915PBF08 IRF8915PBF-15 |
HEXFET Power MOSFET
Ultra-Low Gate Impedance
|
International Rectifier
|
| IRLR7821PBF IRLU7821PBF IRLR7821PF IRLR7821PBF-15 |
Ultra-Low Gate Impedance
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
High Frequency Synchronous Buck
|
International Rectifier
|
| LTC1487 LTC1487CN8 LTC1487CS8 1487F |
Ultra-Low Power RS485 with Low EMI, Shutdown and High Input Impedance
From old datasheet system
|
Linear Technology
|
| MC100EL12D MC100EL12DG MC100EL12DR2 MC100EL12DR2G |
5.0 V ECL Low Impedance Driver 100EL SERIES, 2-INPUT OR/NOR GATE, PDSO8
|
ONSEMI[ON Semiconductor]
http://
|
| STL20NM20N06 STL20NM20N |
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 20A PowerFLAT⑩ ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
|
STMicroelectronics
|
| STS12NH3LL STS12NH3LL07 |
N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.008 ヘ - 12 A - SO-8 ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| HLMP-UL07 HLMP-UL14 HLMP-UG06 HLMP-UH06 HLMP-DL08 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
T-1 - 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP-PowerPAD -40 to 85
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SON -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SOIC -40 to 85
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP-PowerPAD -40 to 85
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 10x31.5 mm; Packaging: Bulk
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-SOIC -40 to 85
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STW23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| STP23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| STF10LN80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
