| PART |
Description |
Maker |
| Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package
Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
| RJS6004WDPK RJS6004WDPK-00T0 |
600V - 20A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| IDD03SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
3 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| IDD08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
8 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| IDH05S120 |
thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS206AJHR |
SiC Schottky Barrier Diode
|
Rohm
|
| IDH15S120 |
thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS206AJ-17 |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS210AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS208AGHR SCS209AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS240AE2C |
SiC Schottky Barrier Diode
|
Rohm
|
