| PART |
Description |
Maker |
| IDW30G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| IDW40G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| KIA7812API KIA7805API KIA7807API KIA7806API KIA780 |
BIPOLAR LINEAR INTEGRATED CIRCUIT
SEMICONDUCTOR
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
| GVT73128A8 73128A8S |
REVOLUTIONARY PINOUT 128K X 8
From old datasheet system
|
Galvantech
|
| GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16
From old datasheet system
|
Galvantech
|
| IS63C1024 |
128K x 8 High Speed CMOS Static RAM 5V Revolutionary Pinout
|
Integrated Silicon Solution
|
| SPD02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPS03N60C3 SPS03N60C308 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B- |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
